The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Feb. 26, 2014
Applicant:

Nscore, Inc., Fukuoka, JP;

Inventor:

Tadahiko Horiuchi, Tokyo, JP;

Assignee:

NSCore, Inc., Fukuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 5/06 (2013.01);
Abstract

A nonvolatile memory device includes a word line, four or more bit lines, three or more MIS transistors having gate nodes thereof connected to the word line, the N-th (N: positive integer) one of the MIS transistors having two source/drain nodes thereof connected to the N-th and N+1-th ones of the bit lines, respectively, a sense circuit having two nodes and configured to amplify a difference between potentials of the two nodes, and a switch circuit configured to electrically couple the N-th and N+2-th ones of the bit lines to the two nodes of the sense circuit, respectively, and to electrically couple the N+1-th one of the bit lines to a fixed potential, for any numerical number N selected to detect single-bit data stored in the N-th and N+1-th ones of the MIS transistors.


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