The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Dec. 27, 2012
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Sun-il Kim, Osan-si, KR;

Jae-chul Park, Suwon-si, KR;

Sang-wook Kim, Yongin-si, KR;

Chang-jung Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/16 (2006.01); H01L 31/18 (2006.01); G01T 1/24 (2006.01); H01L 31/0352 (2006.01); H01L 31/119 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
G01T 1/16 (2013.01); G01T 1/243 (2013.01); H01L 27/14676 (2013.01); H01L 31/035281 (2013.01); H01L 31/119 (2013.01); H01L 31/18 (2013.01); Y02E 10/50 (2013.01);
Abstract

A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer.


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