The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9157959 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 13, 2015

Filed:

Oct. 22, 2012
Applicant:

Renesas Electronics Corporation;

Inventor:

Koichi Ishimi, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G01R 31/3185 (2006.01); G06F 11/30 (2006.01); G06F 11/34 (2006.01); G06F 11/24 (2006.01); G06F 11/07 (2006.01);
U.S. Cl.
CPC ...
G01R 31/318505 (2013.01); G06F 11/008 (2013.01); G06F 11/076 (2013.01); G06F 11/0724 (2013.01); G06F 11/24 (2013.01); G06F 11/3024 (2013.01); G06F 11/3419 (2013.01);
Abstract

The disclosed invention provides a semiconductor device that enables early discovery of a sign of aged deterioration that occurs locally. An LSI has a plurality of modules and a delay monitor cluster including a plurality of delay monitors. Each delay monitor includes a ring oscillator having a plurality of gate elements. Each delay monitor measures a delay time of the gate elements. A CPU #determines if a module proximate to a delay monitor suffers from aged deterioration, based on the delay time measured by the delay monitor.


Find Patent Forward Citations

Ishimi, Koichi. (2015). Semiconductor device (U.S. Patent No. 9157959). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9157959

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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