The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Dec. 21, 2010
Applicant:

Shinya Matsuda, Takarazuka, JP;

Inventor:

Shinya Matsuda, Takarazuka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/04 (2006.01); F02D 11/02 (2006.01); H01L 41/316 (2013.01); H01L 41/319 (2013.01); H01L 41/08 (2006.01); F02D 11/10 (2006.01); H01L 41/09 (2006.01); H01L 41/187 (2006.01); H01L 41/113 (2006.01);
U.S. Cl.
CPC ...
F02D 11/02 (2013.01); H01L 41/0815 (2013.01); H01L 41/316 (2013.01); H01L 41/319 (2013.01); F02D 2011/103 (2013.01); F02D 2400/06 (2013.01); H01L 41/0973 (2013.01); H01L 41/1138 (2013.01); H01L 41/1876 (2013.01); Y10T 29/42 (2015.01);
Abstract

A stress relaxing layer Lcomposed of MgO is formed on the upper surface of a substrate layer Lin order to alleviate stress acting on a piezoelectric layer L, the stress relaxing layer Lis removed while leaving behind a region Dwhere the piezoelectric layer Lis to be formed, and the single crystal piezoelectric layer Lis formed on the upper surface of the stress relaxing layer L. As a result, the stress relaxing layer Lin a region Dwhere the piezoelectric layer Lis not to be formed is preliminarily removed, the region Dwhere the piezoelectric layer Lis to be formed is reduced in size, and stress acting on the piezoelectric layer Lattributable to the difference in lattice constant between the stress relaxing layer Land the piezoelectric layer Land thermal expansion is alleviated, thereby enabling favorable single crystallization of the piezoelectric layer L


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