The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Mar. 22, 2011
Noboru Taniguchi, Osaka, JP;
Kenichi Tokuhiro, Osaka, JP;
Takahiro Suzuki, Osaka, JP;
Tomohiro Kuroha, Aichi, JP;
Takaiki Nomura, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Satoru Tamura, Osaka, JP;
Noboru Taniguchi, Osaka, JP;
Kenichi Tokuhiro, Osaka, JP;
Takahiro Suzuki, Osaka, JP;
Tomohiro Kuroha, Aichi, JP;
Takaiki Nomura, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Satoru Tamura, Osaka, JP;
Abstract
A photoelectrochemical cell () includes: a semiconductor electrode () including a conductor () and semiconductor layers () disposed on the conductor (); a counter electrode () connected electrically to the conductor (); an electrolyte () in contact with surfaces of the semiconductor layer () and the counter electrode (); and a container () accommodating the semiconductor electrode (), the counter electrode () and the electrolyte (). A band edge level Eof a conduction band, a band edge level Eof a valence band, and a Fermi level Ein a surface near-field region of the semiconductor layer, and a band edge level Eof a conduction band, a band edge level Eof a valence band, and a Fermi level Ein a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, E−E>E−E, E−E<E−E, E>−4.44 eV, and E<−5.67 eV. The Fermi level Ein the surface near-field region of the semiconductor layer and the Fermi level Ein the junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to the vacuum level, −5.67 eV<E<−4.44 eV and −5.67 eV<E<−4.44 eV, respectively.