The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Mar. 22, 2011
Applicants:

Noboru Taniguchi, Osaka, JP;

Kenichi Tokuhiro, Osaka, JP;

Takahiro Suzuki, Osaka, JP;

Tomohiro Kuroha, Aichi, JP;

Takaiki Nomura, Osaka, JP;

Kazuhito Hato, Osaka, JP;

Satoru Tamura, Osaka, JP;

Inventors:

Noboru Taniguchi, Osaka, JP;

Kenichi Tokuhiro, Osaka, JP;

Takahiro Suzuki, Osaka, JP;

Tomohiro Kuroha, Aichi, JP;

Takaiki Nomura, Osaka, JP;

Kazuhito Hato, Osaka, JP;

Satoru Tamura, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B 1/06 (2006.01); B01J 35/02 (2006.01); C25B 1/00 (2006.01); C25B 11/04 (2006.01); B01J 35/00 (2006.01); H01M 8/06 (2006.01);
U.S. Cl.
CPC ...
C25B 1/003 (2013.01); C25B 11/0442 (2013.01); B01J 35/004 (2013.01); H01M 8/0656 (2013.01); Y02E 60/366 (2013.01); Y02E 60/368 (2013.01);
Abstract

A photoelectrochemical cell () includes: a semiconductor electrode () including a conductor () and semiconductor layers () disposed on the conductor (); a counter electrode () connected electrically to the conductor (); an electrolyte () in contact with surfaces of the semiconductor layer () and the counter electrode (); and a container () accommodating the semiconductor electrode (), the counter electrode () and the electrolyte (). A band edge level Eof a conduction band, a band edge level Eof a valence band, and a Fermi level Ein a surface near-field region of the semiconductor layer, and a band edge level Eof a conduction band, a band edge level Eof a valence band, and a Fermi level Ein a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, E−E>E−E, E−E<E−E, E>−4.44 eV, and E<−5.67 eV. The Fermi level Ein the surface near-field region of the semiconductor layer and the Fermi level Ein the junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to the vacuum level, −5.67 eV<E<−4.44 eV and −5.67 eV<E<−4.44 eV, respectively.


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