The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Feb. 24, 2014
Applicant:

Tdk Corporation, Minato-ku, Tokyo, JP;

Inventors:

Nobuto Morigasaki, Tokyo, JP;

Takashi Sasaki, Tokyo, JP;

Tomohisa Fukuoka, Tokyo, JP;

Yuhta Matsunaga, Tokyo, JP;

Kazuhiro Komatsu, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/00 (2006.01); H01G 4/06 (2006.01); C04B 35/468 (2006.01); H01G 4/30 (2006.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
C04B 35/4682 (2013.01); H01G 4/1227 (2013.01); H01G 4/30 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3236 (2013.01); C04B 2235/3239 (2013.01); C04B 2235/3241 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3262 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/6584 (2013.01); C04B 2235/664 (2013.01); C04B 2235/785 (2013.01); C04B 2235/79 (2013.01); H01G 4/1236 (2013.01); Y10T 428/2982 (2015.01);
Abstract

A multilayer ceramic composition showing good characteristics, even when electric intensity on dielectric layers is high and a stacked number of a multilayer ceramic capacitor is increased, and an electronic device thereof. Said composition comprises: a perovskite compound ABO, and with respect to 100 moles of said compound, 0.6 or more to 1.4 or less moles of RaOin which Ra is at least one of Dy, Gd and Tb, 0.2 or more to 0.7 or less moles of RbOin which Rb is at least one of Ho and Y, and 0.2 or more to 0.7 or less moles of RcOin which Rc is at least one of Yb and Lu, in terms of each oxide, 0.6 or more to 1.6 or less moles of Mg oxide in terms of Mg, and 0.6 or more to less than 1.2 moles of Si included compound in terms of Si.


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