The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Jul. 29, 2010
Applicants:

Daisuke Miyabe, Tokyo, JP;

Hiromitsu Seto, Tokyo, JP;

Inventors:

Daisuke Miyabe, Tokyo, JP;

Hiromitsu Seto, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 3/087 (2006.01); C03C 17/23 (2006.01);
U.S. Cl.
CPC ...
C03C 3/087 (2013.01); C03C 17/23 (2013.01); C03C 2217/211 (2013.01); C03C 2217/231 (2013.01); C03C 2217/241 (2013.01); C03C 2217/244 (2013.01);
Abstract

The glass substrate of the present invention includes, in terms of mass %: 58.5-69.5% SiO, 2.5-9.9% AlO, 0-2.5% LiO, 0%≦NaO<6%, 0%≦KO<6%, 0% <MgO≦5.2%, 3%<CaO≦13%, 10-27% SrO, 0%≦BaO<5%, 0-3% TiO, and 0-9.8% ZrO. SiO+AlO≦73%, LiO+NaO+KO<6%, 3%<MgO+CaO≦16%, SrO+BaO 10-27%, MgO+CaO+SrO+BaO 21-33%, and MgO/CaO 0.2-1.0 in molar fraction. The glass substrate is substantially free from BO. Glass transition point >555° C., liquidus temperature ≦1200° C., and average thermal expansion coefficient ≦75×10/° C. The present invention can provide a glass substrate having a thermal expansion coefficient close to those of a semi conductor film, etc. and a high strain point, and suitable for continuous production by a float process.


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