The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Dec. 23, 2010
Applicants:
Satish Bhusarapu, Houston, TX (US);
Puneet Gupta, Houston, TX (US);
Yue Huang, Midlothian, VA (US);
Inventors:
Assignee:
SunEdison, Inc., Maryland Heights, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/03 (2006.01); B01J 2/00 (2006.01); C23C 16/44 (2006.01); B01J 2/16 (2006.01); C23C 16/442 (2006.01); C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
C01B 33/03 (2013.01); B01J 2/00 (2013.01); B01J 2/006 (2013.01); B01J 2/16 (2013.01); C23C 16/24 (2013.01); C23C 16/44 (2013.01); C23C 16/4401 (2013.01); C23C 16/442 (2013.01);
Abstract
Processes for producing polycrystalline silicon by thermal decomposition of dichlorosilane are disclosed. The processes generally involve thermal decomposition of dichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.