The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Aug. 09, 2013
Dongbu Hitek Co., Ltd., Gyeonggi-do, KR;
Chung Kyung Jung, Gyeonggi-do, KR;
Ki Jun Yun, Gyeonggi-do, KR;
Oh Jin Jung, Gyeonggi-do, KR;
Sang Wook Ryu, Chungcheongbuk-do, KR;
Seong Hun Jeong, Gyeonggi-do, KR;
Sung Wook Joo, Gyeongsangnam-do, KR;
Dongbu HiTek Co., Ltd., Gyeonggi-do, KR;
Abstract
Method for manufacturing a semiconductor device includes the steps of forming a lower electrode pattern on a substrate, forming a first interlayer insulating layer on the lower electrode pattern, forming an upper electrode pattern on the first interlayer insulating layer, forming a second interlayer insulating layer on the upper electrode pattern, forming an etch blocking layer on a side of the upper electrode pattern, wherein the etch blocking layer passes through the first interlayer insulating layer, forming a cavity which exposes the side of the etch blocking layer by etching the second interlayer insulating layer, and forming a contact ball in the cavity.