The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Aug. 13, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Masahiko Akiyama, Tokyo, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); A61B 5/1455 (2006.01); H01L 27/28 (2006.01); A61B 5/00 (2006.01); H01L 31/167 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
A61B 5/1455 (2013.01); A61B 5/6801 (2013.01); H01L 27/288 (2013.01); H01L 27/3244 (2013.01); H01L 31/167 (2013.01); H01L 27/3269 (2013.01);
Abstract

According to one embodiment, a photoelectric conversion device including a substrate having opaque interconnection layers, an insulating film formed on the substrate, and having a plurality of openings, light-emitting elements formed of the openings, each light-emitting element having an upper electrode layer, and light-receiving elements formed of the openings, each light-receiving element having an upper electrode layer, wherein a semiconductor material is different in the light-emitting element and the light-receiving element, the upper electrode layer both of the light-emitting element and the light-receiving element are formed as common electrodes, and each interconnection layer is formed on a region outside a region specified by the opening.


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