The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Oct. 24, 2012
Qualcomm Incorporated, San Diego, CA (US);
Wei Zhuo, San Diego, CA (US);
Himanshu Khatri, Laguna Niguel, CA (US);
Ojas M Choksi, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Bias voltage generators that can generate variable bias voltages for transistors in mixers and other circuits are disclosed. In an exemplary design, an apparatus (e.g., a wireless device or an integrated circuit (IC)) includes at least one transistor and a bias voltage generator. The transistor(s) have a threshold voltage and receive a bias voltage. The bias voltage generator generates the bias voltage based on changes to the threshold voltage of the transistor(s), e.g., due to IC process and/or temperature. In an exemplary design, the bias voltage generator includes a replica transistor that tracks the transistor(s) and an op-amp that provides a gate voltage for the replica transistor. The bias voltage is generated based on the gate voltage. The bias voltage generator may generate the bias voltage (i) to track the threshold voltage of the transistor(s) in a first mode or (ii) based on a fixed voltage in a second mode.