Transistor with source/drain electrodes on pedestals and organic semiconductor on source/drain electrodes, and method for manufacturing same

Abstract

An organic transistor is provided with: an insulating substrate; a pair of insulating pedestals () that are arranged spaced apart from each other on the substrate and that form respectively raised flat surfaces; a source electrode () provided on the raised flat surface formed on one of the pedestals; a drain electrode () provided on the raised flat surface formed on the other pedestal; a gate electrode () provided on the substrate between the pair of pedestals; and an organic semiconductor layer () arranged in contact with the upper surfaces of the source electrode and the drain electrode. The gate electrode and the lower surface of the organic semiconductor layer vertically oppose each other across a gap region (), and the side surfaces of the pedestals facing the gap region are shaped such that the lower side edges recede apart from the gate electrode with respect to the upper side edges. A contact resistance between the source and drain electrodes and the organic semiconductor layer is reduced, high-speed response performance is enhanced by shortening the channel, and short-circuits between the source and drain electrodes and the gate electrode, which accompany shortening of the channel, can be avoided.