The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Dec. 13, 2012
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Hyun Soo Lim, Seoul, KR;

Kwon Tae Cho, Seoul, KR;

Su Ik Park, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/58 (2010.01); H01L 33/22 (2010.01); H01L 33/44 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/22 (2013.01); H01L 33/44 (2013.01); H01L 33/20 (2013.01); H01L 2224/48091 (2013.01); H01L 2933/0083 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A light-emitting device, a method of fabricating the light-emitting device, a light-emitting device package and a lighting system are provided. The light-emitting device may include a substrate; a first conductivity type semiconductor layerdisposed on the substrate; an active layerdisposed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layerdisposed on the active layer; a first electrodedisposed on the first conductivity type semiconductor layer; a second electrodedisposed on the second conductivity type semiconductor layer; a first light extraction pattern P provided on a top surface of the substrate; and a second light extraction patternprovided on sides of the substrate


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