The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
May. 28, 2013
Applicants:
Juanita N. Kurtin, Hillsboro, OR (US);
Matthew J. Carillo, Portland, OR (US);
Steven M. Hughes, Walla Walla, WA (US);
Inventors:
Juanita N. Kurtin, Hillsboro, OR (US);
Matthew J. Carillo, Portland, OR (US);
Steven M. Hughes, Walla Walla, WA (US);
Assignee:
Pacific Light Technologies Corp., Portland, OH (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/04 (2010.01); H01L 21/02 (2006.01); H01L 33/50 (2010.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); C09K 11/88 (2006.01); C01B 19/00 (2006.01); H01L 33/06 (2010.01); B82Y 30/00 (2011.01); H01L 33/00 (2010.01); B01J 13/02 (2006.01); B82Y 40/00 (2011.01); B82Y 99/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); B01J 13/02 (2013.01); B82Y 30/00 (2013.01); C01B 19/007 (2013.01); C09K 11/02 (2013.01); C09K 11/025 (2013.01); C09K 11/565 (2013.01); C09K 11/883 (2013.01); H01L 21/0256 (2013.01); H01L 21/02422 (2013.01); H01L 21/02557 (2013.01); H01L 21/02601 (2013.01); H01L 21/02628 (2013.01); H01L 33/005 (2013.01); H01L 33/06 (2013.01); H01L 33/502 (2013.01); B82Y 40/00 (2013.01); B82Y 99/00 (2013.01); C01P 2002/84 (2013.01); C01P 2004/04 (2013.01); C01P 2004/10 (2013.01); C01P 2004/54 (2013.01); C01P 2004/64 (2013.01); C01P 2004/80 (2013.01);
Abstract
A method of fabricating a semiconductor structure involves forming an anisotropic nanocrystalline core from a first semiconductor material, the anisotropic nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0, and forming a nanocrystalline shell from a second, different, semiconductor material to at least partially surround the anisotropic nanocrystalline core.