The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jan. 09, 2012
Ajeet Rohatgi, Marietta, GA (US);
Vijay Yelundur, Canton, GA (US);
Vinodh Chandrasekaran, Suwanee, GA (US);
Preston Davis, Atlanta, GA (US);
Ben Damiani, Atlanta, GA (US);
Ajeet Rohatgi, Marietta, GA (US);
Vijay Yelundur, Canton, GA (US);
Vinodh Chandrasekaran, Suwanee, GA (US);
Preston Davis, Atlanta, GA (US);
Ben Damiani, Atlanta, GA (US);
Suniva, Inc., Norcross, GA (US);
Abstract
Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature to anneal the implant damage and activate the introduced dopant, thereby forming an n-type doped layer into the front surface of the base layer. Oxygen may be introduced during the annealing step to form a passivating oxide layer on the n-type doped layer. Back contacts may be screen-printed on the back surface of the base layer, and a p-type doped layer may be formed at the interface of the back surface of the base layer and the back contacts during firing of the back contacts. The back contacts may provide an electrical connection to the p-type doped layer.