The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Apr. 25, 2013
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Young-Jun Kwon, Icheon-si, KR;

Assignee:

SK HYNIX INC., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); G01C 11/34 (2006.01); H01L 29/792 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 21/28282 (2013.01); H01L 29/42344 (2013.01); H01L 29/66833 (2013.01); H01L 27/1157 (2013.01);
Abstract

A nonvolatile memory device includes a memory gate including a memory layer provided over a substrate and a gate electrode provided over the memory layer, the memory gate having first and second opposing sidewalls disposed on first and second sides of the memory gate, respectively; first and second select gates disposed on the first and second sidewalls of the memory gate; a source region formed in the substrate proximate to the first side of the memory gate; a drain region formed in the substrate proximate to the second side of the memory gate; and a gate contact coupled to the gate electrode of the memory gate and to the first select gate, or the second select gate, or both.


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