The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Sep. 23, 2013
Samsung Display Co., Ltd., Yongin, Gyeonggi-do, KR;
Hui-Won Yang, Yongin, KR;
Chaun-Gi Choi, Yongin, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A method of manufacturing a thin-film transistor includes: forming an oxide semiconductor pattern including a first region and a second region on a substrate; forming an insulation film on the substrate to cover the oxide semiconductor pattern; removing the insulation film on the second region through patterning; increasing carrier density of the first region of the oxide semiconductor pattern through an annealing process; forming a gate electrode on the insulation film so that the gate electrode is insulated from the oxide semiconductor pattern and overlaps the second region; and forming a source electrode and a drain electrode to be insulated from the gate electrode and contact the first region.