The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Mar. 03, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seok-Hoon Kim, Hwaseong-si, KR;

Tae-Ouk Kwon, Hwaseong-si, KR;

Su-Jin Jung, Hwaseong-si, KR;

Young-Pil Kim, Hwaseong-si, KR;

Byeong-Chan Lee, Yongin-si, KR;

Bon-Young Koo, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01);
Abstract

Provided is a semiconductor device. The semiconductor device includes a fin on a substrate; a gate electrode cross the fin on the substrate; a source/drain formed on at least one of both sides of the gate electrode, and including a first film and a second film; and a stress film arranged between an isolation film on the substrate and the source/drain, and formed on a side surface of the fin.


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