The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jun. 18, 2014
Renesas Electronics Corporation, Kawasaki-shi, JP;
Sakae Nakajima, Kawasaki, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A semiconductor device includes an N-type semiconductor region, a back electrode, first and second P-type base regions, first and second Ndiffusion layers, a gate insulating film, a gate electrode and a voltage detecting circuit. The first Ndiffusion layer functions as a source of an output MOS transistor and functions as a source of a sense MOS transistor. The gate electrode is provided to oppose the N-type semiconductor region and the first and second P-type base regions through the gate insulating film. A load current flows between the back electrode and the first Ndiffusion layer. The voltage detecting circuit generates a detection signal.