The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Aug. 08, 2013
Applicant:

Sanken Electric Co., Ltd., Niiza, JP;

Inventors:

Akio Iwabuchi, Niiza, JP;

Hironori Aoki, Niiza, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/778 (2006.01); B82Y 10/00 (2011.01); H01L 29/207 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); B82Y 10/00 (2013.01); H01L 29/0657 (2013.01); H01L 29/207 (2013.01); H01L 29/42316 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract

A semiconductor device protects against concentration of electric current at a front end portion of one of the electrodes thereof. The semiconductor device includes a substrate, a compound semiconductor layer formed on the substrate and having a channel layer based on a hetero junction, a first main electrode formed on the compound semiconductor layer, a second main electrode formed on the compound semiconductor surrounding the first main electrode and having a linear region and an arc-shaped region, a control electrode formed on the compound semiconductor layer and disposed opposite to the first main electrode and the second main electrode, an electric current being made to flow between the first main electrode and the second main electrode, and an electric current limiting section formed between the first main electrode and the arc-shaped region of the second main electrode.


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