The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Apr. 26, 2013
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon, KR;

Inventors:

Kee Ju Um, Suwon, KR;

In Hyuk Song, Suwon, KR;

Chang Su Jang, Suwon, KR;

Jaehoon Park, Suwon, KR;

Dong Soo Seo, Suwon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0688 (2013.01); H01L 29/66348 (2013.01);
Abstract

There is provided a power semiconductor device including a contact formed in an active region, a trench gate extendedly formed from the first region into a first termination region and formed alternately with the contact, a first conductive well formed between the contact of the active region and the trench gate, a first conductive well extending portion formed in the first termination region and a part of a second termination region, and a first conductive field limiting ring formed in the second termination region and contacting the well extending portion.


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