The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Nov. 16, 2012
Applicant:
Tohoku University, Miyagi, JP;
Inventors:
Assignee:
TOHOKU UNIVERSITY, Miyagi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/76 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/02 (2006.01); H01L 29/06 (2006.01); H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/469 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/31 (2006.01); H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01); H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 21/28008 (2013.01); H01L 21/28211 (2013.01); H01L 21/28238 (2013.01); H01L 21/28273 (2013.01); H01L 21/302 (2013.01); H01L 21/30604 (2013.01); H01L 21/3247 (2013.01); H01L 21/823857 (2013.01); H01L 27/092 (2013.01); H01L 29/1033 (2013.01); H01L 29/4238 (2013.01); H01L 29/78 (2013.01); H01L 29/7881 (2013.01);
Abstract
A gate insulating film of a conventional semiconductor device is subjected to dielectric breakdown at a low electric field strength and thus its service life is short. This is because since the size of the asperity of at least one of a semiconductor layer-side interface and an electrode-side interface is large and, an electric field applied to the gate insulating film is locally concentrated and has a variation in its strength. This problem is solved by specifying the sizes of the asperities of both interfaces of the gate insulating film.