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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9153658 B1

PDFFull Text
Date of Patent:
Oct. 06, 2015

Filed:

Nov. 16, 2012

Semiconductor device and method of manufacturing the same

Applicant:

Tohoku University, Miyagi, JP;

Inventors:

Rihito Kuroda, Miyagi, JP;

Akinobu Teramoto, Miyagi, JP;

Shigetoshi Sugawa, Miyagi, JP;

Assignee:

TOHOKU UNIVERSITY, Miyagi, JP;

Attorney:

Morgan, Lewis & Bockius LLP

Primary Examiner:

Hoang-Quan Ho

Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/76 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/02 (2006.01); H01L 29/06 (2006.01); H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/469 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/31 (2006.01); H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01); H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 21/28008 (2013.01); H01L 21/28211 (2013.01); H01L 21/28238 (2013.01); H01L 21/28273 (2013.01); H01L 21/302 (2013.01); H01L 21/30604 (2013.01); H01L 21/3247 (2013.01); H01L 21/823857 (2013.01); H01L 27/092 (2013.01); H01L 29/1033 (2013.01); H01L 29/4238 (2013.01); H01L 29/78 (2013.01); H01L 29/7881 (2013.01);
Abstract

A gate insulating film of a conventional semiconductor device is subjected to dielectric breakdown at a low electric field strength and thus its service life is short. This is because since the size of the asperity of at least one of a semiconductor layer-side interface and an electrode-side interface is large and, an electric field applied to the gate insulating film is locally concentrated and has a variation in its strength. This problem is solved by specifying the sizes of the asperities of both interfaces of the gate insulating film.

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Kuroda, Rihito. (2015). Semiconductor device and method of manufacturing the same (U.S. Patent No. 9153658). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9153658

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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