The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9153656 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 06, 2015

Filed:

Dec. 04, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Toshihiko Iinuma, Mie-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42324 (2013.01); H01L 21/28273 (2013.01); H01L 27/11521 (2013.01); H01L 29/7881 (2013.01);
Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes: first semiconductor regions extending in a first direction and arranged in a direction crossing the first direction; control gate electrodes provided on an upper side of the first semiconductor regions, extending in a second direction different from the first direction, and arranged in a direction crossing the second direction; a charge storage layer provided in a position each of the first semiconductor regions and each of the control gate electrodes cross; a first insulating film provided between the charge storage layer and each of the first semiconductor regions; a second insulating film provided between the charge storage layer and each of the control gate electrodes; and a silicon-containing layer in contact with part of a side wall of each of the control gate electrodes and having a gradient in a silicon concentration in a direction crossing the second direction.


Find Patent Forward Citations

Iinuma, Toshihiko. (2015). Nand type nonvolatile semiconductor memory device and method for manufacturing same (U.S. Patent No. 9153656). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9153656

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…