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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9153649 B1

PDFFull Text
Date of Patent:
Oct. 06, 2015

Filed:

Nov. 27, 2013

Semiconductor device and method for evaluating semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Toshinari Sasaki, Tokyo, JP;

Hiroshi Kanemura, Tochigi, JP;

Yasuharu Hosaka, Tochigi, JP;

Shuhei Yokoyama, Shizuoka, JP;

Toshimitsu Obonai, Tochigi, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., , JP;

Attorney:

Husch Blackwell LLP

Primary Examiner:

Benjamin M Baldridge

Int. Cl.
CPC ...
G01R 31/02 (2006.01); H01L 29/22 (2006.01); H01L 29/786 (2006.01); H01L 27/146 (2006.01); G09G 3/00 (2006.01); G09G 3/32 (2006.01); G09G 3/36 (2006.01); G01R 31/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/22 (2013.01); H01L 27/14678 (2013.01); H01L 27/14692 (2013.01); H01L 29/7869 (2013.01); G01R 31/2656 (2013.01); G09G 3/006 (2013.01); G09G 3/3225 (2013.01); G09G 3/3648 (2013.01);
Abstract

A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor.

Find Patent Forward Citations

Sasaki, Toshinari. (2015). Semiconductor device and method for evaluating semiconductor device (U.S. Patent No. 9153649). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9153649

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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