The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Apr. 03, 2012
Applicants:
Shinkuro Sato, Tokyo, JP;
Akito Kuramata, Tokyo, JP;
Yoshikatsu Morishima, Tokyo, JP;
Kazuyuki Iizuka, Tokyo, JP;
Inventors:
Shinkuro Sato, Tokyo, JP;
Akito Kuramata, Tokyo, JP;
Yoshikatsu Morishima, Tokyo, JP;
Kazuyuki Iizuka, Tokyo, JP;
Assignees:
TAMURA CORPORATION, Tokyo, JP;
KOHA CO, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/267 (2006.01); H01L 29/737 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/812 (2006.01); H01L 29/872 (2006.01); C23C 16/02 (2006.01); C23C 16/30 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C23C 16/0218 (2013.01); C23C 16/0227 (2013.01); C23C 16/0272 (2013.01); C23C 16/303 (2013.01); C30B 25/183 (2013.01); C30B 29/403 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02414 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 29/267 (2013.01); H01L 29/7371 (2013.01); H01L 29/7788 (2013.01); H01L 29/7789 (2013.01); H01L 29/7827 (2013.01); H01L 29/8122 (2013.01); H01L 29/8128 (2013.01); H01L 29/872 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01);
Abstract
A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a GaOsubstrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the GaOsubstrate, and a nitride semiconductor layer formed on the AlN buffer layer.