The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Apr. 30, 2013
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;

Inventor:

Mitsutoshi Kawamoto, Nagaokakyo, JP;

Assignee:

MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/465 (2006.01); H01G 4/10 (2006.01); H01L 49/02 (2006.01); B82Y 30/00 (2011.01); C01G 23/00 (2006.01); C04B 35/47 (2006.01); C04B 35/626 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01); B28B 11/24 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); B28B 11/24 (2013.01); B82Y 30/00 (2013.01); C01G 23/006 (2013.01); C04B 35/47 (2013.01); C04B 35/6261 (2013.01); H01G 4/1227 (2013.01); H01G 4/30 (2013.01); C01P 2006/12 (2013.01); C01P 2006/40 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3241 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3262 (2013.01); C04B 2235/3275 (2013.01); C04B 2235/3279 (2013.01); C04B 2235/3281 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/36 (2013.01); C04B 2235/441 (2013.01); C04B 2235/444 (2013.01); C04B 2235/483 (2013.01); C04B 2235/5409 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/652 (2013.01); C04B 2235/6582 (2013.01); C04B 2235/663 (2013.01); C04B 2235/786 (2013.01); C04B 2235/79 (2013.01); C04B 2235/85 (2013.01);
Abstract

A semiconductor ceramic contains a donor element solid-solved in crystal grains of a SrTiO-based compound, and an acceptor element in a grain boundary layer. The number of tetravalent acceptor elements is 1×10/g or more, as determined from an electron spin resonance absorption spectrum. A mixture of a calcined powder and an acceptor compound is pulverized to a specific surface area of 5.0 to 7.5 m/g before mixing with a binder. Semiconductor ceramic layers having a varistor function are formed by using the semiconductor ceramic forming a highly reliable capacitor which can suppress characteristics variations to stably obtain good electrical characteristics.


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