The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jul. 24, 2014
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Kazuyuki Kouno, Osaka, JP;
Takanori Ueda, Kanagawa, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); G11C 13/00 (2006.01); G11C 7/14 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); G11C 7/14 (2013.01); G11C 11/16 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/79 (2013.01);
Abstract
A non-volatile semiconductor memory device includes a plurality of series-coupled fixed resistance elements, a plurality of reference cell transistors, and reference word lines coupled to gates of the reference cell transistors, a first reference data line coupled to one end of a resistance path in which a plurality of fixed resistance elements are arranged, and a second reference data line coupled in common to one ends of the reference cell transistors. The other end of each of the reference cell transistors is coupled to one of coupling points of the fixed resistance elements or the other end of the resistance path.