The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Jun. 28, 2012
Applicants:

Dae-woo Kim, Yongin, KR;

Jong-hyun Park, Yongin, KR;

Inventors:

Dae-Woo Kim, Yongin, KR;

Jong-Hyun Park, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1255 (2013.01); H01L 27/124 (2013.01); H01L 27/1259 (2013.01); H01L 27/3276 (2013.01);
Abstract

A thin film transistor array substrate may include a thin film transistor including an active layer, a gate electrode, source and drain electrodes, a first insulation layer arranged between the active layer and the gate electrode, and a second insulation layer arranged between the gate electrode and the source and drain electrodes, a pixel electrode arranged on the first insulation layer and comprising the same material as the gate electrode, a capacitor comprising a first electrode arranged on the same layer as the active layer and a second electrode arranged on the same layer as the gate electrode, a pad electrode arranged on the second insulation layer and comprising the same material as the source and drain electrodes, a protection layer formed on the pad electrode, and a third insulation layer formed on the protection layer and exposing the pixel electrode.


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