The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Apr. 30, 2014
AU Optronics Corporation, Hsin-Chu, TW;
Shin-Shueh Chen, Hsin-Chu, TW;
Po-Hsueh Chen, Hsin-Chu, TW;
AU OPTRONICS CORPORATION, Hsin-Chu, TW;
Abstract
A semiconductor device includes a substrate, a gate electrode, an insulating layer, a source electrode, a drain electrode, a semiconductor channel layer, a first passivation layer and a second passivation layer. The gate is formed on the substrate. The insulating layer covers the gate electrode. The source electrode and the drain electrode are positioned on the insulating layer. The semiconductor channel layer is disposed on the insulating layer, and connects the source electrode and the drain electrode. The first passivation layer covers the source electrode, the drain electrode and the semiconductor channel layer. The first passivation layer includes silicon oxide. The second passivation layer is disposed on the first passivation layer. The second passivation layer includes silicon nitride that has a hydrogen concentration of about 2.0×10atom/cmto about 3.11×10atom/cm.