The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Sep. 14, 2012
Hye Young Ryu, Seoul, KR;
Hee Jun Byeon, Suwon-si, KR;
Woo Geun Lee, Yongin-si, KR;
Kap Soo Yoon, Seoul, KR;
Yoon Ho Kim, Seoul, KR;
Chun Won Byun, Yongin-si, KR;
Hye Young Ryu, Seoul, KR;
Hee Jun Byeon, Suwon-si, KR;
Woo Geun Lee, Yongin-si, KR;
Kap Soo Yoon, Seoul, KR;
Yoon Ho Kim, Seoul, KR;
Chun Won Byun, Yongin-si, KR;
SAMSUNG DISPLAY CO., LTD., , KR;
Abstract
A thin film transistor array panel and a manufacturing method thereof according to an exemplary embodiment of the present invention form a contact hole in a second passivation layer formed of an organic insulator, protect a side of the contact hole by covering with a protection member formed of the same layer as the first field generating electrode and formed of a transparent conductive material, and etch the first passivation layer below the second passivation layer using the protection member as a mask. Therefore, it is possible to prevent the second passivation layer formed of an organic insulator from being overetched while etching the insulating layer below the second passivation layer so that the contact hole is prevented from being made excessively wide.