The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
May. 29, 2013
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, Osaka, JP;
Inventor:
Fumio Yamada, Kofu, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/16 (2006.01); H01L 27/06 (2006.01); H01L 25/00 (2006.01); H03F 3/21 (2006.01); H03F 1/02 (2006.01); H03F 3/193 (2006.01); H03F 3/24 (2006.01); H01L 25/065 (2006.01); H01L 25/18 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 23/00 (2006.01); H01L 21/8252 (2006.01); H01L 27/085 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0605 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/7787 (2013.01); H03F 1/0272 (2013.01); H03F 3/193 (2013.01); H03F 3/21 (2013.01); H03F 3/211 (2013.01); H03F 3/24 (2013.01); H01L 21/8252 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 27/085 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/10336 (2013.01); H01L 2924/10337 (2013.01); H01L 2924/10344 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13052 (2013.01); H01L 2924/13064 (2013.01); H03F 2200/408 (2013.01); H03F 2200/411 (2013.01);
Abstract
A semiconductor apparatus that includes two types of transistors is disclosed. A first semiconductor chip includes the first semiconductor device of a transistor type of GaAs-HEMT, while, a second semiconductor chip includes a second semiconductor device of a transistor type GaN-HEMT. The second semiconductor device is formed on a SiC substrate, and the first semiconductor chip is mounted in an inactive region of the SiC substrate.