The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Mar. 21, 2014
Texas Instruments Incorporated, Dallas, TX (US);
Henry Litzmann Edwards, Garland, TX (US);
Akram A. Salman, Plano, TX (US);
Md. Iqbal Mahmud, Arlington, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A segmented bipolar transistor includes a p-base in a semiconductor surface including at least one p-base finger having a base metal/silicide stack including a base metal line that contacts a silicide layer on the semiconductor surface of the p-base finger. An n+ buried layer is under the p-base. A collector includes an n+ sinker extending from the semiconductor surface to the n+ buried layer including a collector finger having a collector metal/silicide stack including a collector metal line that contacts a silicide layer on the semiconductor surface of the collector finger. An n+ emitter has at least one emitter finger including an emitter metal/silicide stack that contacts the silicide layer on the semiconductor surface of the emitter finger. The emitter metal/silicide stack and/or collector metal/silicide stack include segmentation with a gap which cuts a metal line and/or the silicide layer of the stack.