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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9153546 B1

PDFFull Text
Date of Patent:
Oct. 06, 2015

Filed:

Aug. 07, 2014

Reliable electrical fuse with localized programming and method of making the same

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Yan Zun Li, Lagrangeville, NY (US);

Zhengwen Li, Scarsdale, NY (US);

Chengwen Pei, Danbury, CT (US);

Jian Yu, Danbury, CT (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Yuanmin Cai

Hoffman Warnick LLC

Primary Examiner:

Selim Ahmed

Assistant Examiner:

Moin Rahman

Int. Cl.
CPC ...
H01L 21/332 (2006.01); H01L 23/52 (2006.01); H01L 23/62 (2006.01); H01L 21/84 (2006.01); H01L 23/525 (2006.01); H01L 27/12 (2006.01); G11C 17/16 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 23/62 (2013.01); G11C 17/16 (2013.01); H01L 21/02532 (2013.01); H01L 21/28518 (2013.01); H01L 21/76886 (2013.01); H01L 21/823814 (2013.01); H01L 21/84 (2013.01); H01L 23/5256 (2013.01); H01L 27/1203 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact.

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