logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9153536 B1

PDFFull Text
Date of Patent:
Oct. 06, 2015

Filed:

May. 16, 2012

Al alloy film for semiconductor device

Applicants:

Hiroyuki Okuno, Kobe, JP;

Toshihiro Kugimiya, Kobe, JP;

Yoshihiro Yokota, Kobe, JP;

Takeaki Maeda, Kobe, JP;

Inventors:

Hiroyuki Okuno, Kobe, JP;

Toshihiro Kugimiya, Kobe, JP;

Yoshihiro Yokota, Kobe, JP;

Takeaki Maeda, Kobe, JP;

Assignee:

Kobe Steel, Ltd., Kobe-shi, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Thanh Y Tran

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/22 (2006.01); H01L 31/0256 (2006.01); H01L 31/0296 (2006.01); H01L 23/532 (2006.01); H01J 37/34 (2006.01); C22C 21/02 (2006.01); C22C 21/00 (2006.01); C22C 21/12 (2006.01); C22C 21/14 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53219 (2013.01); C22C 21/00 (2013.01); C22C 21/02 (2013.01); C22C 21/12 (2013.01); C22C 21/14 (2013.01); H01J 37/3429 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract

Provided is an Al alloy film for semiconductor devices, which has excellent heat resistance and is suppressed in the generation of hillocks even in cases where the Al alloy film is exposed to high temperatures, and which has low electrical resistivity as a film. The present invention relates to an Al alloy film for semiconductor devices, which is characterized by satisfying all of the features (a)-(c) described below after being subjected to a heat treatment wherein the Al alloy film is held at 500° C. for 30 minutes and by having a film thickness from 500 nm to 5 μm. (a) The maximum grain diameter of the Al matrix is 800 nm or less. (b) The hillock density is less than 1×10pieces/m. (c) The electrical resistivity is 10 μΩcm or less.

Find Patent Forward Citations

Loading…