The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Nov. 06, 2013
Applicant:
Toru Tanaka, Nagoya, JP;
Inventor:
Toru Tanaka, Nagoya, JP;
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49513 (2013.01); H01L 23/49562 (2013.01); H01L 24/32 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/29 (2013.01); H01L 24/33 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/2908 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29118 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29355 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83825 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15747 (2013.01);
Abstract
A semiconductor device includes: a semiconductor element that includes an electrode layer on a surface of the semiconductor element; a low-strength layer that is provided on a surface of the electrode layer; a bonding layer that is provided on a surface of the low-strength layer; and a conductive plate that is provided on a surface of the bonding layer. Strength of the bonding layer is higher than strength of the electrode layer, and strength of the low-strength layer is lower than the strength of the electrode layer.