The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jun. 14, 2011
Mitsuaki Hori, Yokohama, JP;
Kazutaka Yoshizawa, Yokohama, JP;
Mitsuaki Hori, Yokohama, JP;
Kazutaka Yoshizawa, Yokohama, JP;
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Abstract
A method for manufacturing a semiconductor device includes implanting indium into a first region of a semiconductor substrate; forming a first gate insulation film having a first film thickness in the first region and a second region different from the first region after the implanting; removing the first gate insulation film from the first region; applying heat treatment to the semiconductor substrate after the forming; and forming a second gate insulation film having a second film thickness on the first region after the applying. In the method, a temperature falling rate of the heat treatment in the applying is 20° C. per second or higher.