The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Mar. 11, 2013
Sharp Kabushiki Kaisha, Osaka, JP;
Katsuyuki Suga, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
An objective of the present invention is to increase production efficiency of high-performance flexible semiconductor devices. A semiconductor device manufacturing method includes: a step of forming an insulating substrate () which is configured of glass substrates () with a thermal expansion coefficient which approximates the thermal expansion coefficient of a single-crystal silicon substrate () and a plastic substrate () which is positioned between both of the glass substrates; and a step of, after bonding the insulating substrate () with the single-crystal silicon substrate (), separating a portion of the single-crystal silicon substrate () with heat processing, and forming a single-crystal silicon layer () upon the glass substrate ().