The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Mar. 06, 2014
Shelby Forrester Nelson, Pittsford, NY (US);
Lee William Tutt, Webster, NY (US);
Shelby Forrester Nelson, Pittsford, NY (US);
Lee William Tutt, Webster, NY (US);
EASTMAN KODAK COMPANY, Rochester, NY (US);
Abstract
A method of forming a gate layer of a thin film transistor includes providing a substrate including a gate structure having a reentrant profile. A conformal conductive inorganic thin film is deposited over the gate structure and in the reentrant profile. A photoresist is deposited on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile. The photoresist is exposed from a side of the photoresist opposite the substrate allowing the photoresist in the reentrant profile to remain unexposed. The conformal conductive inorganic thin film is etched in areas not protected by the photoresist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.