The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Mar. 12, 2012
Kenichi Ohtsuka, Tokyo, JP;
Hiroshi Watanabe, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Hiroshi Watanabe, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Fabrication of a termination structure in a semiconductor device increases in some cases the numbers of ion implantation processes or of photolithography processes, thus leading to an increase in fabrication costs. To overcome this problem, a semiconductor device is provided which includes an n-type drift layer formed on a semiconductor substrate; an element region formed in a surface portion of the drift layer; a recess formed in a loop in a laterally outer portion of the drift layer, spaced away a predetermined distance from the element region; and a p-type dopant region formed ranging from a bottom of the recess to a position away from the recess and toward the element region, a thickness of the dopant region where no recess is provided being greater than that where the recess is provided.