The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Sep. 05, 2014
Applicant:
Silanna Semiconductor U.s.a., Inc., San Diego, CA (US);
Inventors:
Chris N. Brindle, Poway, CA (US);
Michael A. Stuber, Rancho Santa Fe, CA (US);
Stuart B. Molin, Carlsbad, CA (US);
Assignee:
Silanna Semiconductor U.S.A., Inc., San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 21/20 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/2007 (2013.01); H01L 21/265 (2013.01); H01L 21/30 (2013.01); H01L 21/30604 (2013.01); H01L 21/76877 (2013.01); H01L 21/84 (2013.01); H01L 24/83 (2013.01); H01L 27/1203 (2013.01); H01L 29/7803 (2013.01); H01L 2224/27452 (2013.01); H01L 2224/27616 (2013.01); H01L 2224/838 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/1207 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1421 (2013.01);
Abstract
An integrated circuit chip is formed with an active layer and a trap rich layer. The active layer is formed with an active device layer and a metal interconnect layer. The trap rich layer is formed above the active layer. In some embodiments, the active layer is included in a semiconductor wafer, and the trap rich layer is included in a handle wafer.