The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Mar. 14, 2013
Applicant:

Sen Corporation, Shinagawa-ku, Tokyo, JP;

Inventor:

Masateru Sato, Tokyo, JP;

Assignee:

SEN CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 7/24 (2006.01); H05B 31/26 (2006.01); H01J 27/02 (2006.01); H01J 27/14 (2006.01);
U.S. Cl.
CPC ...
H01J 27/024 (2013.01); H01J 27/146 (2013.01);
Abstract

An ion source device has a configuration in which a cathode is provided in an arc chamber having a space for plasma formation, and a repeller is disposed to face a thermal electron discharge face of the cathode by interposing the space for plasma formation therebetween. An external magnetic field that is induced by a source magnetic field unit is applied to the space for plasma formation in a direction parallel to an axis that connects the cathode and the repeller. An opening is provided in a place corresponding to a portion in the repeller with the highest density of plasma that is formed in the space for plasma formation, and an ion beam is extracted from the opening.


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