The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9153366 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 06, 2015

Filed:

Sep. 24, 2013
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;

Inventor:

Sakyo Hirose, Nagaokakyo, JP;

Assignee:

MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01C 7/00 (2006.01); H01C 7/18 (2006.01); H01C 7/04 (2006.01); H01C 17/12 (2006.01); G01K 7/22 (2006.01);
U.S. Cl.
CPC ...
H01C 7/18 (2013.01); G01K 7/22 (2013.01); H01C 7/006 (2013.01); H01C 7/047 (2013.01); H01C 17/12 (2013.01);
Abstract

A resistance element that includes a resistor made of a thin film containing VOas a main component and at least one of W, Nb, Mo and Ti as an additive element. The thin film has a plurality of layer regions distributed in the direction of thickness thereof, and amounts of the additive elements doped in the layer regions are different from each other between the adjacent layer regions. Terminal electrodes are disposed such that a current flows through the plural layer regions of the resistor. Preferably, an interval at which the plural layer regions are distributed is selected to be not less than 8 nm and not more than 35 nm.


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