The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Feb. 27, 2010
Applicant:
Sung-wei Chen, Singapore, SG;
Inventor:
Sung-Wei Chen, Singapore, SG;
Assignee:
EMPIRE TECHNOLOGY DEVELOPMENT LLC, Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 5/02 (2006.01); H01B 3/00 (2006.01); C25D 11/18 (2006.01); C25D 11/20 (2006.01);
U.S. Cl.
CPC ...
H01B 3/004 (2013.01); C25D 5/02 (2013.01); C25D 11/18 (2013.01); C25D 11/20 (2013.01); Y10T 156/10 (2015.01);
Abstract
Metal nanoparticles are assembled in interrupted metal strands or other structures of characteristic dimensions and orientation to generate a giant dielectric response through a modified GE effect. Careful selection and modification of the host material and synthesis also leads to low dielectric breakdown voltages. In addition, the high dielectric composite material is employed in material configurations that are more scalable for industrial and consumer applications.