The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
May. 15, 2014
Infineon Technologies Austria Ag, Villach, AT;
Infineon Technologies Austria AG, Villach, AU;
Abstract
This disclosure describes techniques for regulating a kfactor (i.e., a load current-to-sensing current ratio) of a current sensing power metal-oxide-semiconductor field-effect transistor (MOSFET). The techniques may include generating a reference voltage based on a configurable function that defines the reference voltage as a function of two or more main terminal voltages which are obtained at two or more different locations on a metallization that forms a main terminal of a current sensing power MOSFET, and regulating a sensing terminal of the current sensing power MOSFET at a voltage that is determined based on the reference voltage. Using a configurable function of two or more main terminal voltages to regulate a sensing terminal of a current sensing power MOSFET may allow the voltage at which the sensing terminal is regulated to be trimmed in order to improve the accuracy of the kfactor produced by the current sensing power MOSFET.