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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9150955 B1

PDFFull Text
Date of Patent:
Oct. 06, 2015

Filed:

Apr. 05, 2013

Method of making molybdenum containing targets comprising molybdenum, titanium, and tantalum or chromium

Applicant:

H.c. Starck, Inc., Newton, MA (US);

Inventors:

Gary Alan Rozak, Akron, OH (US);

Mark E. Gaydos, Nashua, NH (US);

Patrick Alan Hogan, Somerville, MA (US);

Shuwei Sun, Framingham, MA (US);

Assignee:

H.C. STARCK INC., Newton, MA (US);

Attorney:

The Dobrusin Law Firm, P.C.

Primary Examiner:

Holly Le

Int. Cl.
CPC ...
C23C 14/06 (2006.01); C23C 14/14 (2006.01); C23C 14/16 (2006.01); C23C 14/34 (2006.01); C23C 14/58 (2006.01); C23C 14/54 (2006.01); C23C 14/35 (2006.01); C03C 17/40 (2006.01); C22C 1/04 (2006.01); C22C 27/04 (2006.01); C23G 1/10 (2006.01); C23G 1/20 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3407 (2013.01); C03C 17/40 (2013.01); C22C 1/045 (2013.01); C22C 27/04 (2013.01); C23C 14/3414 (2013.01); C23C 14/3492 (2013.01); C23C 14/35 (2013.01); C23C 14/548 (2013.01); C23C 14/5873 (2013.01); C23G 1/106 (2013.01); C23G 1/205 (2013.01); B22F 2998/10 (2013.01); C23C 14/0688 (2013.01); C23C 14/14 (2013.01); C23C 14/16 (2013.01); Y10T 428/12014 (2015.01); Y10T 428/12021 (2015.01); Y10T 428/31678 (2015.04);
Abstract

The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of; placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target white the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably includes a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.1 to 45 atomic percent titanium; and 0.1 to 40 atomic percent of a third metal element that is tantalum or chromium.

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