The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Sep. 04, 2013
Applicant:

Sandisk Corporation, Milpitas, CA (US);

Inventors:

Jeffery A. Whiteford, Belmont, CA (US);

Mihai A. Buretea, San Francisco, CA (US);

Jian Chen, Mountain View, CA (US);

William P. Freeman, San Mateo, CA (US);

Andreas Meisel, San Francisco, CA (US);

Linh Nguyen, San Jose, CA (US);

J. Wallace Parce, Palo Alto, CA (US);

Erik C. Scher, San Francisco, CA (US);

Assignee:

SanDisk Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); C07F 5/02 (2006.01);
U.S. Cl.
CPC ...
B05D 5/12 (2013.01); C07F 5/025 (2013.01); Y10T 428/2982 (2015.01); Y10T 428/2991 (2015.01); Y10T 428/2993 (2015.01); Y10T 428/2995 (2015.01); Y10T 428/2996 (2015.01); Y10T 428/2998 (2015.01);
Abstract

Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.).


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