The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Apr. 23, 2015
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Takeshi Saito, Tokyo, JP;

Masakazu Takabayashi, Tokyo, JP;

Eitaro Ishimura, Tokyo, JP;

Tohru Takiguchi, Tokyo, JP;

Kazuhisa Takagi, Tokyo, JP;

Keisuke Matsumoto, Tokyo, JP;

Yoshifumi Sasahata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/026 (2006.01); H04B 10/54 (2013.01); H04B 10/25 (2013.01); H04B 10/548 (2013.01); H04J 14/02 (2006.01); H01S 3/067 (2006.01); H01S 5/40 (2006.01); H01S 5/065 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0265 (2013.01); H01S 3/067 (2013.01); H01S 5/4062 (2013.01); H04B 10/54 (2013.01); H04B 10/548 (2013.01); H04J 14/02 (2013.01); H01S 5/0654 (2013.01);
Abstract

An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a light intensity lowering section located in each of the first optical waveguides and lower light intensity of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the respective semiconductor lasers; to decrease line width of the light output by the semiconductor lasers.


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