logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9147808 B1

PDFFull Text
Date of Patent:
Sep. 29, 2015

Filed:

Oct. 24, 2014

Iii-nitride quantum well structure and a light-emitting unit using the same

Applicant:

National Sun Yat-sen University, Kaohsiung, TW;

Inventors:

I-Kai Lo, Kaohsiung, TW;

Yu-Chi Hsu, Kaohsiung, TW;

Cheng-Hung Shih, Kaohsiung, TW;

Wen-Yuan Pang, Kaohsiung, TW;

Ming-Chi Chou, Kaohsiung, TW;

Assignee:

NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung, TW;

Attorney:

Muncy, Geissler, Olds & Lowe P.C.

Primary Examiner:

Sonya D McCall Shepard

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/20 (2010.01); H01L 21/02 (2006.01); H01L 33/04 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02631 (2013.01); H01L 27/156 (2013.01); H01L 33/0075 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/42 (2013.01);
Abstract

An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

Find Patent Forward Citations

Quick Actions:

Lo, I-Kai. (2015). Iii-nitride quantum well structure and a light-emitting unit using the same (U.S. Patent No. 9147808). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9147808

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…