The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Sep. 10, 2014
Applicant:

Inha-industry Partnership Institute, Incheon, KR;

Inventors:

Se-Geun Park, Seoul, KR;

Jin-Kyun Lee, Incheon, KR;

Myung-Soo Kim, Gyeonggi-do, KR;

Jung Seokheon, Incheon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 31/18 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 51/44 (2013.01);
Abstract

The present invention provides a method for fabricating nano material pattern comprising the steps of forming a perfluorinated polymer pattern on top of the substrate (step 1); spreading a dispersion containing the dispersed nano material on the substrate patterned in step 1) (step 2); and eliminating the perfluorinated polymer pattern formed on the substrate of step 2) (step 3). The method for fabricating nano material pattern of the present invention has advantages over the conventional lift-off method for the fabrication of nano material pattern, which are easiness in eliminating the perfluorinated polymer pattern after forming the nano material pattern with it and no chance of damaging the substrate, suggesting that the method of the invention is excellent in fabricating an excellent nano material pattern.


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