The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
May. 01, 2013
Applicant:
The Boeing Company, Chicago, IL (US);
Inventor:
Xiaobo Zhang, Sylmar, CA (US);
Assignee:
THE BOEING COMPANY, Chicago, IL (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 31/02 (2006.01); H01L 31/044 (2014.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 29/401 (2013.01); H01L 29/66128 (2013.01); H01L 29/8611 (2013.01); H01L 31/02021 (2013.01); H01L 31/044 (2014.12); H01L 29/456 (2013.01); Y02E 10/50 (2013.01);
Abstract
The present disclosure provides a system, method, and apparatus for a solar cell by-pass diode with improved metal contacts. The method involves depositing a dielectric layer (e.g., SiO2 layer) on the metal contacts, and etching off a portion of the dielectric layer after sintering the metal contacts. The dielectric layer prevents the contact metal from oxidation during sintering. The unetched portion of the dielectric layer is used as the P-N junction passivation by the by-pass diode.